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FGA15N20FTD 1200V, 15A Trench IGBT
January 2008
FGA15N120FTD
1200V, 15A Field Stop Trench IGBT
Features
* Field stop trench technology * High speed switching * Low saturation voltage: VCE(sat) =1.58V @ IC = 15A * High input impedance * RoHS complaint
tm
General Description
Using advanced field stop trench technology, Fairchild's 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggeness. This device is designed for soft switching applications.
Applications
* Induction heating and Microwave oven * Soft switching applications
C
G
TO-3PN
GCE E
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25 C @ TC = 100oC
o
Ratings
1200 25 @ TC = 25oC 30 15 45 @ TC = 100oC 15 90 220 88 -55 to +150 -55 to +150 300 @ TC = 100oC
Units
V V A A A A A W W
o o o
C C C
Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT) RJC(Diode) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 1
Typ.
-
Max.
0.57 2.1 62.5
Units
oC/W o o
C/W C/W
(c)2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FGA15N120FTD Rev. A
FGA15N120FTD 1200V, 15A Trench IGBT
Package Marking and Ordering Information
Device Marking
FGA15N120FTD
Device
FGA15N120FTDTU
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES ICES IGES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
1200 -
-
1 250
V mA nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 15mA, VCE = VGE IC = 15A, VGE = 15V IC = 15A, VGE = 15V, TC = 125oC 3.5 6 1.58 1.83 7.5 2 V V V
Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 2350 70 45 pF pF pF
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 600V, IC = 15A, VGE = 15V VCC = 600V, IC = 15A, RG = 15, VGE = 15V, Resistive Load, TC = 125oC VCC = 600V, IC = 15A, RG = 15, VGE = 15V, Resistive Load, TC = 25oC 33 80 160 255 0.3 0.58 0.88 30 115 170 390 0.38 0.89 1.27 100 19 45 330 0.74 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
FGA15N120FTD Rev. A
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FGA15N120FTD 1200V, 15A Trench IGBT
Electrical Characteristics of the Diode
Symbol
VFM trr Irr Qrr
TC = 25C unless otherwise noted
Parameter
Diode Forward Voltage
Test Conditions
IF = 15A TC = 25oC
o
Min.
-
Typ.
1.4 1.42 575 577 30 37 8.7 10.7
Max
1.8 -
Units
V
TC = 125 C TC = 25oC TC = 125oC
o
Diode Reverse Recovery Time IES =15A, dI/dt = 200A/s
ns
Diode Peak Reverse Recovery Cyrrent
TC = 25oC TC = 125 C TC = 25oC TC = 125 C
o
A C
Diode Reverse Recovery Charge
FGA15N120FTD Rev. A
3
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FGA15N120FTD 1200V, 15A Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
120
TC = 25 C
o
Figure 2. Typical Output Characteristics
120
TC = 125 C
o
20V
20V 17V
Collector Current, IC [A]
Collector Current, IC [A]
90
17V 15V 12V
90
15V 12V
60
60
10V
10V
30
VGE = 8V
30
VGE = 8V
0 0 2 4 6 8 10 Collector-Emitter Voltage, VCE [V] 12
0 0 2 4 6 8 10 Collector-Emitter Voltage, VCE [V] 12
Figure 3. Typical Saturation Voltage Characteristics
100
Common Emitter VGE = 15V
Figure 4. Transfer Characteristics
100
Common Emitter VCE = 20V
Collector Current, IC [A]
Collector Current, IC [A]
80
TC = 25 C TC = 125 C
o
o
o 80 TC = 25 C
TC = 125 C
o
60
60
40
40
20
20
0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 6
0 2 4 6 8 10 12 Gate-Emitter Voltage,VGE [V] 14
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
2.8
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V 30A
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
Collector-Emitter Voltage, VCE [V]
TC = 25 C
o
16
2.4
12
2.0
15A
8
1.6
IC = 10A
4
15A IC = 10A
30A
1.2 25
0
50 75 100 125 150 o Collector-EmitterCase Temperature, TC [ C]
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGA15N120FTD Rev. A
4
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FGA15N120FTD 1200V, 15A Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter TC = 125 C
o
Figure 8. Capacitance Characteristics
4000
Common Emitter VGE = 0V, f = 1MHz Cies TC = 25 C
o
Collector-Emitter Voltage, VCE [V]
16
Capacitance [pF]
3000
12
2000
8
15A 30A IC = 10A
Coes
1000
Cres
4
0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20
0 1 10 Collector-Emitter Voltage, VCE [V]
30
Figure 9. Gate charge Characteristics
15
Common Emitter
o
Figure 10. SOA Characteristics
200 100 IC MAX (Pulse)
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
TC = 25 C VCC = 200V 400V 600V
10s
10
10
100s 1ms 10ms
1
IC MAX (Continuous) DC Operation *Notes: o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse
5
0.1
0 0 30 60 90 Gate Charge, Qg [nC] 120
0.01 1 10 100 1000 Collector-Emitter Voltage, VCE [V]
2000
Figure 11. Turn-on Characteristics vs. Gate Resistance
300
Figure 12. Turn-off Characteristics vs. Gate Resistance
2000
Common Emitter VCC = 600V, VGE = 15V IC = 15A TC = 25 C TC = 125 C
o o
1000
Switching Time [ns]
td(off)
100
tr
Switching Time [ns]
td(on)
Common Emitter VCC = 600V, VGE = 15V IC = 15A TC = 25 C TC = 125 C
o o
tf
100
70
10 0 20 40 60 80 Gate Resistance, RG [] 100
0
20
40
60
80
100
Gate Resistance, RG []
FGA15N120FTD Rev. A
5
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FGA15N120FTD 1200V, 15A Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Collector Current
600
Common Emitter VGE = 15V, RG = 15 TC = 25 C
o o
Figure 14. Turn-off Characteristics vs. Collector Current
1000
tf
Switching Time [ns]
100
Switching Time [ns]
TC = 125 C
tr
100
td(off)
td(on)
Common Emitter VGE = 15V, RG = 15 TC = 25 C TC = 125 C
o o
10 10
15
20
25
30
10 10
15
20
25
30
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
10000
Common Emitter VCC = 600V, VGE = 15V IC = 15A TC = 25 C TC = 125 C
o o
Figure 16. Switching Loss vs. Collector Current
10000
Common Emitter VGE = 15V, RG = 15 TC = 25 C
o o
Switching Loss [J]
Switching Loss [J]
TC = 125 C
Eoff
1000
Eoff Eon
1000
Eon
100
0
20
40 60 80 Gate Resistance, RG []
100
100 10
15
20
25
30
Collector Current, IC [A]
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
40
80
Collector Current, IC [A]
Forward Current, IF [A]
10
o
TJ = 125 C
10
TJ = 25 C
o
1
TC = 25 C
Safe Operating Area o VGE = 15V, TC = 125 C
o
TC = 125 C
o
1 1 10 100 1000 2000 Collector-Emitter Voltage, VCE [V]
0.1 0.0
0.5
1.0 1.5 2.0 Forward Voltage, VF [V]
2.5
FGA15N120FTD Rev. A
6
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FGA15N120FTD 1200V, 15A Trench IGBT
Typical Performance Characteristics
Figure 19. Reverse Recovery Current
40
Reverse Recovery Currnet, Irr [A]
200A/s
Figure 20. Stored Charge
14000 Stored Recovery Charge, Qrr [nC] 12000 10000 8000 6000 4000 2000 0 5 10 15 20 Forward Current, IF [A] 25 30
200A/s
30
20
di/dt = 100A/s
di/dt = 100A/s
10
0 5 10 15 20 Forward Current, IF [A] 25 30
Figure 21.Reverse Recovery Time
800
Reverse Recovery Time, trr [ns]
di/dt = 100A/s
600
200A/s
400
200 5 10 15 20 25 30
Forward Current, IF [A]
Figure 22.Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.5 0.2
0.1 0.1
0.05 0.02 0.01
0.01 single pulse
PDM t1 t2
Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
1E-3 1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
FGA15N120FTD Rev. A
7
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FGA15N120FTD 1200V, 15A Trench IGBT
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
FGA15N120FTD Rev. A
8
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FGA15N120FTD 1200V, 15A Trench IGBT
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EZSWITCHTM *
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I33
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
FGA15N120FTD Rev. A
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